Enhanced Catalytic Palladium Embedded Inside Porous Silicon for Improved Hydrogen Gas Sensing

In this work, we reported on room temperature porous silicon (PS) and embedding PS using simple economical techniques of electrochemical etching thermal evaporation. The substrate was prepared the technique electrochemically n-type Si (100) wafer at a constant current density 10 mA/cm2 for min under illumination incandescent white light. After formation, Ge pieces were thermally evaporated onto two substrates in vacuum condition. This then followed by deposition ZnO layer Ge/PS same method commercial 99.9% pure powders. three samples identified as PS, ZnO/Ge/PS samples, respectively. Pd finger contacts deposited (Ge/PS ZnO/Ge/PS) to form hydrogen sensors RF magnetron sputtering. SEM EDX suggested presence substantial inside uniform circular pores Raman spectra showed that good crystalline nanostructures embedded obtained. For sensing, Schottky diode exhibited dramatic change after exposure H2 compared devices. It is observed sensitivity increased exponentially with flow rate all sensors. more towards than especially high higher gain (69.11) shorter response (180 s) recovery times (30 s).